MCH3914 no. a1511-1/4 specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. features ? | yfs | is large. ? ciss is small. ? small package. ? fbet process. ? halogen free compliance. speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dsx 15 v gate-to-drain voltage v gds --15 v gate current i g 5ma drain current i d 50 ma allowable power dissipation p d when mounted on ceramic substrate (600mm 2 0.8mm) 300 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max gate-to-drain breakdown voltage v (br)gds i g =--10 a, v ds =0v --15 v gate-to-source leakage current i gss v gs =--10v, v ds =0v --1.0 na cutoff voltage v gs (off) v ds =5v, i d =10 a --0.6 --1.4 --3.0 v continued on next page. ordering number : ena1511 72209ac tk im tc-00002014 sanyo semiconductors data sheet MCH3914 n-channel junction silicon fet high-frequency ampli er, analog switch applications www.semiconductor-sanyo.com/network
MCH3914 no. a1511-2/4 continued from preceding page. parameter symbol conditions ratings unit min typ max zero-gate voltage drain current i dss v ds =5v, v gs =0v 16.0* 50.0* ma forward transfer admittance | yfs | 1v ds =5v, i d =10ma, f=1khz 14 21 ms | yfs | 2v ds =5v, v gs =0v, f=1khz 14 29 ms input capacitance ciss v ds =5v, v gs =0v, f=1mhz 4.9 pf reverse transfer capacitance crss v ds =5v, v gs =0v, f=1mhz 1.4 pf * : the MCH3914 is classi ed by i dss as follows : (unit : ma) marking j7 j8 rank 7 8 i dss 16.0 to 32.0 25.0 to 50.0 package dimensions unit : mm (typ) 7019a-006 1 : source 2 : drain 3 : gate sanyo : mcph3 0.25 0.25 0.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 12 3 0 to 0.02 i d -- v ds drain-to-source voltage, v ds -- v drain current, i d -- ma i d -- v gs gate-to-source voltage, v gs -- v drain current, i d -- ma 048121620 0 4 8 12 20 16 24 itr02811 --2.8 --2.4 --2.0 --1.6 --1.2 --0.8 --0.4 0 0 10 20 30 40 50 60 it14783 v ds =0v --0.2v --0.4v - -0.6v --0.8v --1.0v v ds =5v i dss =50ma 32ma 25ma 20ma 16ma
MCH3914 no. a1511-3/4 it14786 drain-to-source voltage, v ds -- v ciss -- v ds input capacitance, ciss -- pf drain-to-source voltage, v ds -- v crss -- v ds reverse transfer capacitance, crss -- pf cutoff voltage, v gs (off) -- v v gs (off) -- i dss drain current, i dss -- ma ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- mw 350 250 300 200 100 50 150 0 0 20 40 60 80 100 120 140 160 when mounted on ceramic substrate (600mm 2 0.8mm) 5 10 2 7 5 37 100 5 3 2 --1.0 7 5 it14785 7 1.0 2 357 10 2 1.0 2 3 5 7 10 itr02816 7 1.0 23 57 10 2 5 7 1.0 3 2 5 itr02817 v gs =0v f=1mhz v ds =5v i d =10 a v gs =0v f=1mhz i d -- v gs gate-to-source voltage, v gs -- v drain current, i d -- ma drain current, i dss -- ma | y fs | -- i dss forward transfer admittance, | y fs | -- ms --2.0 --1.6 --1.2 --0.8 --0.4 0 0 10 20 30 40 50 itr02813 5 7 10 2 57 3 100 10 2 3 7 5 100 it14784 v ds =5v i dss =25ma ta=--25 c 75 c 25 c v ds =5v f=1khz | y fs | ( v gs =0v) | y fs | ( i d =10ma)
MCH3914 no. a1511-4/4 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. ps this catalog provides information as of july, 2009. speci cations and information herein are subject to change without notice.
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